TSC1417 datasheet(1/3 Pages) JIANGSU

Teilenummer	TSC1417

Bauteilbeschribung	TO-92 Plastic-Encapsulate Transistors

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Hersteller	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TSC1417

TRANSISTOR (NPN)

FEATURES

General Purpose Switching and Amplification.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

20

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

15

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

3

V

Collector cut-off current

ICBO

VCB=10V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=2V,IC=0

1

μA

DC current gain

hFE

VCE=6V, IC=1mA

29

270

Collector-emitter saturation voltage

VCE(sat)

IC=10mA,IB=1mA

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC=10mA,IB=1mA

1.42

V

Transition frequency

fT

VCE=6V,IC=1mA

300

MHz

CLASSIFICATION OF hFE

RANK

D

E

F

G

H

I

J

RANGE

29-45

39-60

54-80

72-108

97-146

132-198

180-270

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

15

V

VEBO

Emitter-Base Voltage

3

V

IC

Collector Current

30

mA

PC

Collector Power Dissipation

625

mW

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

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