Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7460DP-T1 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7460DP-T1 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si7460DP Vishay Siliconix Document Number: 72126 S-03416—Rev. A, 03-Mar-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VSD - Source-to-Drain Voltage (V) 0.000 0.004 0.008 0.012 0.016 0.020 02468 10 VGS - Gate-to-Source Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.004 0.008 0.012 0.016 0.020 0 8 16 24 32 40 0 2 4 6 8 10 0 2040 6080 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 0 102030405060 Crss Coss Ciss VDS = 30 V ID = 18 A VGS = 10 V ID = 18 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) TJ = 150_C TJ = 25_C ID = 18 A 40 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VGS = 4.5 V |
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