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0-0B066PA006SB-M992F09 Datenblatt(PDF) 3 Page - Vincotech |
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0-0B066PA006SB-M992F09 Datenblatt(HTML) 3 Page - Vincotech |
3 / 17 page 10-0B066PA006SB-M992F09 datasheet 23 Jun. 2017 / Revision 3 3 Copyright Vincotech Characteristic Values Parameter Symbol Conditions Value Unit VGE [V] VGS [V] VCE [V] VDS [V] VF [V] IC [A] ID [A] IF [A] Tj [°C] Min Typ Max Inverter Switch Static Gate-emitter threshold voltage VGE(th) VGE = VCE 0,00018 25 5 5,8 6,5 V Collector-emitter saturation voltage VCEsat 15 6 25 1,1 1,49 1,9 V 125 1,68 Collector-emitter cut-off current ICES 0 600 25 0,04 µA Gate-emitter leakage current IGES 20 0 25 300 nA Internal gate resistance rg none Ω Input capacitance Cies f = 100 KHz 0 25 25 368 pF Output capacitance Coes 28 Reverse transfer capacitance Cres 11 Gate charge Qg 15 180 6 25 42 nC Thermal Thermal resistance junction to sink Rth(j-s) Thermal grease thickness ≤ 50 µm λ = 1 W/mK 3,50 K/W Dynamic Turn-on delay time td(on) Rgoff = 64 Ω ±15 300 6 25 105 ns 150 102 Rise time tr 25 22 150 28 Turn-off delay time td(off) Rgon = 64 Ω 25 142 150 164 Fall time tf 25 103 150 132 Turn-on energy (per pulse) Eon QrFWD = 0,3 μC 25 0,150 mWs QrFWD = 0,8 μC 150 0,225 Turn-off energy (per pulse) Eoff 25 0,146 150 0,193 |
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