Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB030N10RV8 Datenblatt(PDF) 4 Page - Cystech Electonics Corp. |
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MTB030N10RV8 Datenblatt(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 4/9 MTB030N10RV8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 10 20 30 40 50 024 68 10 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VDS, Drain-Source Voltage(V) 3.5V VGS=3V 10V,9V,8V,7V, 6V, 5V 4V ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.1 1 10 100 ID, Drain Current(A) VGS=4.5V 10V VGS=3V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02468 10 12 14 16 18 20 IDR, Reverse Drain Current(A) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 30 60 90 120 150 02 46 8 1 VGS, Gate-Source Voltage(V) 0 ID=20A Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=20A RDSON@Tj=25°C : 27.4mΩ typ. |
Ähnliche Teilenummer - MTB030N10RV8 |
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Ähnliche Beschreibung - MTB030N10RV8 |
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