4

SN74AUP1G17

SCES579J – JUNE 2004 – REVISED SEPTEMBER 2017

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Copyright © 2004–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

–0.5

4.6

V

–0.5

4.6

V

–0.5

4.6

V

–0.5

V

Input clamp current

–50

mA

Output clamp current

–50

mA

Continuous output current

±20

mA

±50

mA

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

2000

V

1000

(1)

CMOS Inputs.

(2)

Defined by the signal-integrity requirements and design-goal priorities

6.3 Recommended Operating Conditions

See

(1)

MIN

MAX

UNIT

Supply voltage

0.8

3.6

V

Input voltage

0

3.6

V

Output voltage

0

V

(2)

High-level output current

–20

µA

–1.1

mA

–1.7

–1.9

–3.1

–4

(2)

Low-level output current

20

µA

1.1

mA

1.7

1.9

3.1

4

Operating free-air temperature

–40

85

°C