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1N4139 Datenblatt(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd

Teilenummer 1N4139
Bauteilbeschribung  Plastic Silicon Rectifiers
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Hersteller  LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]
Direct Link  http://www.luguang.cn/web_en/index.html
Logo LUGUANG - Shenzhen Luguang Electronic Technology Co., Ltd

1N4139 Datenblatt(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd

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Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Cas e: JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
Ratings at 25
am bient tem perature unless otherwise s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N
4139
1N
4141
1N
4142
1N
4143
1N
4144
1N
4145
1N
4146
UNITS
Maxim um recurrent peak revers e voltage
VRRM
50
200
400
600
800
1000
1200
V
Maximum RMS voltage
VRMS
35
140
280
420
560
700
840
V
Maxim um DC blocking voltage
VDC
50
200
400
600
800
1000
1200
V
Maxim um average forward rectified current
9.5m m lead length,
@TA=75
Peak forward surge current
10m s s ingle half-s ine-wave
superim pos ed on rated load
@TJ=125
Maxim um ins tantaneous forward voltage
@ 3.0 A
VF
V
Maxim um revers e current
@TA=25
at rated DC blocking voltage
@TA=100
Typical junction capacitance
(Note1)
CJ
pF
Typical therm al res is tance
(Note2)
R
JA
/W
Operating junction tem perature range
TJ
Storage tem perature range
TSTG
A
Eas ily cleaned with Free, Alcohol, Isopropanol
and s im ilar s olvents
70
Plastic Silicon Rectifiers
VOLTAGE RANGE: 50 --- 1200V
CURRENT: 3.0 A
DO - 27
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
A
300.0
IR
IFSM
IF(AV)
1N
4140
100
3.0
Note: 1.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2.Thermal resistance f rom junction to ambient.
100.0
A
- 55 ---- + 150
- 55 ---- + 150
1.0
35
10.0
20
Dimensions in millimeters
1N4139-1N4146
Features
Mechanical Data
ht
t
p
:
//
www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1


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