Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4935G Datenblatt(PDF) 1 Page - Yangzhou yangjie electronic co., ltd |
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1N4935G Datenblatt(HTML) 1 Page - Yangzhou yangjie electronic co., ltd |
1 / 4 page 1N4933G THRU 1N4937G 1 / 4 Yangzhou Yangjie Electronic Technology Co., Ltd. S-A023 Rev. 2.0, 28-Apr-14 www.21yangjie.com Fast Recovery Rectifier Features ● High efficiency ● High current capability ● High reliability ● High surge current capability ● Low power loss ● Glass passivated chip junction ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Mechanical Data ● Package: DO-204AL(DO-41) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102 ● Polarity:Color band denotes cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Device marking code 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 Average Forward Current @60Hz sine wave, Resistance load, Ta=75℃ IF(AV) A 1.0 Surge(Non-repetitive)Forward Current @60Hz Half-sine wave, 1 cycle, Ta=25℃ IFSM A 30 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55~+150 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Maximum instantaneous forward voltage drop per diode V FM V IFM=1.0A 1.2 Maximum DC reverse current at rated DC blocking voltage per diode I RRM1 μA Ta=25℃ 2.5 I RRM2 Ta=125℃ 100 Reverse Recovery time trr ns IF=0.5A IR=1A IRR=0.25A 150 Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. 20 ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Thermal Resistance(Typical) RθJ-A ℃ /W 60 COMPLIANT RoHS |
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