Datenblatt-Suchmaschine für elektronische Bauteile |
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FAN604MX Datenblatt(PDF) 8 Page - ON Semiconductor |
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FAN604MX Datenblatt(HTML) 8 Page - ON Semiconductor |
8 / 23 page FAN604 www.onsemi.com 7 5. Design guaranteed. ELECTRICAL CHARACTERISTICS (CONTINUED) For typical values TJ = 25°C, for min/max values TJ = -40°C to 125°C, VDD = 15 V; unless otherwise noted. Parameter Test Conditions Symbol Min Typ Max Unit Shut-Down Function Section SD Pin Source Current ISD 90 103 110 μA Threshold Voltage for Shut-Down Function Enable VSD-TH 0.95 1.00 1.05 V Debounce Time for Shut-Down Function tD-SD 200 400 600 μs Ratio between threshold voltage and source current ZSD-TH 8.5 10 11 k Ω Hysteresis of Threshold Voltage for Shut- Down Function Enable VSD-TH-ST 1.30 1.35 1.40 V Duration of VSD-TH-ST at startup tSD-ST 0.4 1.0 1.6 ms Constant Current Correction Section High Line Compensation Current VIN = 264 Vrms ICOMP-H 90 100 110 μA Low Line Compensation Current VIN = 90 Vrms ICOMP-L 32 36 40 μA Constant Current Estimator Section CCR Pin Source Current ICCR 18.2 20 21.8 μA Constant Current Control Reference Offset Voltage (Note 5) VREF_CC_Offset 0.8 V Peak Value Amplifying Gain (Note 5) APK 3.6 V/V FB CC Pull-Up Voltage CC (Note 5) VFB-CC-Open 4.0 V Internal Voltage Attenuator of FB CC (Note 5) AV-CC 0.444 V/V GATE Section Gate Output Voltage Low VGATE-L 0 - 1.5 V Internal Gate PMOS Driver ON VDD Falling VDD-PMOS-ON 7.0 7.5 8.0 V Internal Gate PMOS Driver OFF VDD Rising VDD-PMOS-OFF 9.0 9.5 10.0 V Rising Time VCS=0 V, VS=0 V, CGATE=1nF tr 100 135 180 ns Falling Time VCS=0 V, VS=0 V, CGATE=1nF TJ = 25C tf 30 50 70 ns Gate Output Clamping Voltage VDD=25 V VGATE-CLAMP 6.8 7.5 8.2 V Maximum On Time VFB=3V, VCS=0.3V tON-MAX 20 22 25 μs |
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Ähnliche Beschreibung - FAN604MX |
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