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FAN6204AMX Datenblatt(PDF) 7 Page - ON Semiconductor

Teilenummer FAN6204AMX
Bauteilbeschribung  Synchronous Rectification Controller
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Hersteller  ONSEMI [ON Semiconductor]
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© 2015 Semiconductor Components Industries, LLC.
www.onsemi.com
FAN6204A
• Rev. 1.1
6
Electrical Characteristics
VDD=15 V and TA=25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
LPC Section (Continued)
VLPC-CLAMP-H Higher Clamp Voltage(3)
6
V
VLPC-DIS
LPC Voltage to Disable SR Gate
4.0
4.2
4.4
V
tLPC-HIGH
Debounce Time for Disable SR Gate
1
s
RES Section
VRES-EN
Threshold Voltage of VRES to Enable SR MOSFET
0.60
0.75
0.90
V
tRES-LOW
Debounce Time to Disable RES Function
1
2
µs
VRES-CLAMP-H Higher Clamp Voltage(3)
6
V
KRES-DROP
RES Dropping Protection Ratio within One Cycle
90
%
tRES-DROP
Debounce Time for RES Voltage-Drop Protection
1.5
µs
Internal Timing Section
tCT
Linear Operation Range of CT
VLPC=1.5 V
27
30
33
s
VLPC-OP
Linear Operation Range of LPC to
Charge CT
VDD<5 V
0.8
3.4
V
VDD>5 V
0.8
4.0
V
VRES-OP
Linear Operation Range of RES to
Discharge CT
VDD<5 V
0.8
3.4
V
VDD>5 V
0.8
4.0
V
RatioLPC-RES Ratio Between LPC and RES
4.65
5.00
5.35
tLPC-EN
Minimum LPC Time to Enable SR Switching, VLPC-HIGH>VLPC-EN
0.9
1.1
1.3
µs
tgate-limit
ton-SR(n+1)< tgate-limitx ton-SR(n)
105
120
%
Green Section
tGREEN-OFF
CT Capacitor tDIS Time to Leave
Green Mode
fS=65 kHz
4.60
5.35
6.10
µs
tGREEN-ON
CT Capacitor tDIS Time to Enter
Green Mode
fS=65 kHz
4.25
4.80
5.35
µs
tGREEN-TIME-
enter
Cycle Time to Enter Green Mode
CT Discharge Time < tGREEN-ON
3
Times
tGREEN-TIME-
leave
Cycle Time to Leave Green Mode
CT Discharge Time > tGREEN-OFF
7
Times
tGREEN-ENTER No Gate Signal to Enter Green Mode(3)
75
µs
Causal Function Section
tCAUSAL
Once tS-PWM(n+1) > tCAUSALxtS-
PWM
(n), SR Stops Switching and
Enter Green Mode
fS=65 kHz  40 kHz
120
%
tDEAD-CAUSAL
SR Turn-off Dead Time by Causal
Function
fS=65 kHz
380
580
780
ns
tDEAD-CFR
Dead Time to Shrink SR ON Time
CFR (Causal Function Regulator)
150
ns
tDEAD-RE-CFR SR ON Time Narrowed Down Width when tDEAD-CFR Triggered
1.5
s
Internal Over-Temperature Protection Section
TOTP
Internal Threshold Temperature for OTP(3)
140
°C
TOTP-HYST
Hysteresis Temperature for Internal OTP(3)
20
°C
Note:
3.
Guaranteed by design.


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