FDD86367 datasheet(3/8 Pages) ONSEMI

Teilenummer	FDD86367

Bauteilbeschribung	N-Channel PowerTrench MOSFET

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Electrical Characteristics T

J = 25°C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-to-Source Breakdown Voltage

ID = 250μA, VGS = 0V

80

-

V

IDSS

Drain-to-Source Leakage Current

VDS=80V, TJ = 25oC

-

1

μA

VGS = 0V

TJ = 175oC (Note 4)

-

1

mA

IGSS

Gate-to-Source Leakage Current

VGS = ±20V

-

±100

nA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250μA2

3

4

V

RDS(on)

Drain to Source On Resistance

ID = 80A,

VGS= 10V

TJ = 25oC

-

3.3

4.2

m

Ω

TJ = 175oC (Note 4)

-

6.6

8.4

m

Ω

Ciss

Input Capacitance

VDS = 40V, VGS = 0V,

f = 1MHz

-

4840

-

pF

Coss

Output Capacitance

-

814

-

pF

Crss

Reverse Transfer Capacitance

-

31

-

pF

Rg

Gate Resistance

VGS = 0.5V, f = 1MHz

-

2.3

-

Ω

Qg(ToT)

Total Gate Charge

VGS = 0 to 10V

VDD = 40V

ID = 80A

-68

88

nC

Qg(th)

Threshold Gate Charge

VGS = 0 to 2V

-

8.8

-

nC

Qgs

Gate-to-Source Gate Charge

-22

-

nC

Qgd

Gate-to-Drain “Miller“ Charge

-

14

-

nC

Switching Characteristics

Drain-Source Diode Characteristics

Note:

4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

ton

Turn-On Time

VDD = 40V, ID = 80A,

VGS = 10V, RGEN = 6Ω

-

104

ns

td(on)

Turn-On Delay

-

20

-

ns

tr

Rise Time

-

49

-

ns

td(off)

Turn-Off Delay

-

36

-

ns

tf

Fall Time

-

16

-

ns

toff

Turn-Off Time

-

80

ns

VSD

Source-to-Drain Diode Voltage

ISD = 80A, VGS = 0V

-

1.3

V

ISD = 40A, VGS = 0V

-

1.2

V

trr

Reverse-Recovery Time

VDD = 64V, IF = 80A,

dISD/dt = 100A/μs

-

68

102

ns

Qrr

Reverse-Recovery Charge

-

66

106

nC

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