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FSBB15CH120DF Datenblatt(PDF) 6 Page - ON Semiconductor

Teilenummer FSBB15CH120DF
Bauteilbeschribung  Motion SPM
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© 2017 Semiconductor Components Industries, LLC
5
www.fairchildsemi.com
www.onsemi.com
FSBB15CH120DF • Rev. 1.0
Absolute Maximum Ratings (T
J = 25°C, Unless Otherwise Specified)
Inverter Part
Control Part
Total System
Thermal Resistance
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Symbol
Parameter
Conditions
Rating
Unit
VPN
Supply Voltage
Applied between P - NU, NV, NW
900
V
VPN(Surge)
Supply Voltage (Surge)
Applied between P - NU, NV, NW
1000
V
VCES
Collector - Emitter Voltage
1200
V
± IC
Each IGBT Collector Current
TC = 25°C, TJ 150°C (Note 4)
15
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ  150°C, Under 1 ms Pulse
Width (Note 4)
30
A
PC
Collector Dissipation
TC = 25°C per One Chip (Note 4)
89
W
TJ
Operating Junction Temperature
-40 ~ 150
°C
Symbol
Parameter
Conditions
Rating
Unit
VCC
Control Supply Voltage
Applied between VCC(H), VCC(L) - COM
20
V
VBS
High-Side Control Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VCC+0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3 ~ VCC+0.3
V
IFO
Fault Output Current
Sink Current at VFO pin
2
mA
VSC
Current Sensing Input Voltage
Applied between CSC - COM
-0.3 ~ VCC+0.3
V
Symbol
Parameter
Conditions
Rating
Unit
VPN(PROT)
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-repetitive, < 2
s
800
V
TC
Module Case Operation Temperature
See Figure 2
-40 ~ 125
°C
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
2500
Vrms
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Rth(j-c)Q
Junction to Case Thermal Resistance
(Note 5)
Inverter IGBT part (per 1 / 6 module)
-
-
1.40
°C / W
Rth(j-c)F
Inverter FWD part (per 1 / 6 module)
-
-
1.93
°C / W


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