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SI1300DL Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI1300DL Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si1300DL Vishay Siliconix New Product www.vishay.com 2 Document Number: 71301 S-01883—Rev. A, 28-Aug-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 10 mA 20 24 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 50 mA 0.4 0.9 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "2 "100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 0.001 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS = 5.0 V, VGS = 2.5 V 120 160 mA On-State Drain Currenta ID(on) VDS = 8.0 V, VGS = 4.5 V 400 800 mA Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 150 mA 1.6 2.5 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 250 mA 1.2 2.0 W Forward Transconductancea gfs VDS = 2.5 V, ID = 50 mA 200 mS Diode Forward Voltagea VSD IS = 50 mA, VGS = 0 V 0.7 1.2 V Dynamic Total Gate Charge Qg V 5 0 V V 4 5 V I 100 A 350 450 C Gate-Source Charge Qgs VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA 25 pC Gate-Drain Charge Qgd 100 Input Capacitance Ciss V5 0 V V 0 V f 1 MH 20 F Output Capacitance Coss VDS = 5.0 V, VGS = 0 V, f = 1 MHz 14 pF Reverse Transfer Capacitance Crss 5 Switchingb, c Turn-On Delay Time td(on) V 3 0 V R 100 W 7 12 Rise Time tr VDD = 3.0 V, RL = 100 W I 0 25 A V 4 5 V R 10 W 25 35 ns Turn-Off Delay Time td(off) DD , L ID = 0.25 A, VGEN = 4.5 V, RG = 10 W 19 30 ns Fall Time tf 9 15 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. |
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