SMBYT03-40 datasheet(3/5 Pages) STMICROELECTRONICS

Teilenummer	SMBYT03-40

Bauteilbeschribung	FAST RECOVERY RECTIFIER DIODES

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0.001

0.01

0.1

1

10

0

2

4

6

8

10

12

14

16

18

20

IM

t

=0.5

t(s)

IM(A)

Tc=25 C

o

Tc=55 C

o

Tc=40 C

o

Fig.3 : Non repetitive surge peak forward current

versus overload duration.

0.001

0.01

0.1

1

10

0.01

0.1

1

Zth(j-c) (tp.

)

K=

Rth(j-c)

=0. 5

=0 . 2

=0. 1

Single pulse

tp(s)

T

=tp/T

tp

K

Fig.4 : Relative variation of thermal impedance

junction to lead versus pulse duration.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

10

20

30

40

50

60

P=0.5W

T

I

M

=tp/T

tp

IM(A)

P=1.5W

P=2.5W

Fig.2 : Peak current versus form factor.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

=0.05

=0.1

=0.2

=0.5

T

=tp/T

tp

IF(av)(A)

PF(av)(W)

=1

Fig.1 : Low frequency power losses versus

average current.

0

20

40

60

80

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T

=tp/T

tp

=0.5

F(av)(A)

I

o

Tamb( C)

1cm Cu

2

Rth(j-a)=65

C/W

o

Rth(j-a)=Rth(j-l)

Fig.6 : Average current versus ambient

temperature. (duty cycle : 0.5)

0.01

0.1

1

10

0.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

3.0

I FM(A)

VFM(V)

Tl=100

C

o

50

Fig.5 : Voltage drop versus forward current.

(Maximum values)

SMBYT03

3/5

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