Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7495 Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7495 Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 09/23/03 IRF7495 HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Notes through are on page 8 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A PD - 94683B VDSS RDS(on) max ID 100V 22m :@VGS = 10V 7.3A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C dv/dt Peak Diode Recovery dv/dt h V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient (PCB Mount) e ––– 50 7.3 -55 to + 150 0.02 2.5 Max. 7.3 4.6 58 100 ± 20 |
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