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SI6954ADQ Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI6954ADQ Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si6954ADQ Vishay Siliconix New Product Document Number: 71130 S-00013—Rev. A, 24-Jan-00 www.siliconix.com S FaxBack 408-970-5600 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 100 200 300 400 500 600 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 0 2 4 6 8 10 024 68 0 0.03 0.06 0.09 0.12 0.15 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 3.4 A ID – Drain Current (A) VGS = 10 V ID = 3.4 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.03 0.06 0.09 0.12 0.15 02468 10 TJ = 150_C ID = 3.4 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 25_C |
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