Datenblatt-Suchmaschine für elektronische Bauteile |
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AZT740S22 Datenblatt(PDF) 4 Page - Power Semiconductors |
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AZT740S22 Datenblatt(HTML) 4 Page - Power Semiconductors |
4 / 4 page AZT740 HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION Feb. 17 - Issue: 3 Distributed by 0 500 1000 1500 2000 2500 3000 3500 0 0,5 1 1,5 2 Forward Voltage [V] FORWARD CHARACTERISTIC Tj = 125 °C 0 5 10 15 20 25 30 35 40 45 0,001 0,01 0,1 1 10 100 t[s] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0 5 10 15 20 25 30 35 1 10 100 n° cycles SURGE CHARACTERISTIC Tj = 125 °C All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 2 G K 1 Ø6 .5 70 Ø1 3 177 104 92 80 G-K Termi nali A 2.8x0.8 V5 1 2 |
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Ähnliche Beschreibung - AZT740S22 |
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