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SI4854DY Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI4854DY Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si4854DY Vishay Siliconix New Product Document Number: 71444 S-03476—Rev. A, 16-Apr-01 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 6 12 18 24 30 0 2468 10 VGS = 10 thru 3 V TC = 125_C –55 _C 2 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 0 300 600 900 1200 1500 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 0 2 4 6 8 10 04 8 12 16 20 0.000 0.015 0.030 0.045 0.060 0.075 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 15 V ID = 6.9 A ID – Drain Current (A) VGS = 10 V ID = 6.9 A VGS = 10 V VGS = 4.5 V Gate Charge On-Resistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) VGS = 2.5 V |
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